Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties

Authors

  • Makhmudov Sh.A Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100214, Uzbekistan
  • Mirzarayimov Zh.Z Namangan Institute of Engineering and Technology, Namangan. 353-DIUM physics ўқituvchisi, Namangan city, Chartak
  • Mirzarayimova F.Z Namangan Institute of Engineering and Technology, Namangan
  • Mamadalieva G.K

Keywords:

thermal and radiation defects, neutron-doped silicon

Abstract

The influence of defects induced by fast neutron irradiation on the carrier removal rate in reference p-Si and neutron transmutation doped silicon (p-Si < B, P >) was investigated by the Hall effect and specific resistance techniques at room temperature. It is shown that the carrier removal rate is larger in p-Si < B, P >, than that of p-Si . The barrier model was proposed for explanation of the observed effect..

Downloads

Published

2023-01-23

Issue

Vol. 16 (2023): ERB

Section

Articles

How to Cite

Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties. (2023). Eurasian Research Bulletin , 16, 156-160. https://geniusjournals.org/index.php/erb/article/view/3206