Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties

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Published: Jan 23, 2023
Keywords:
thermal and radiation defects neutron-doped silicon

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Makhmudov Sh.A
Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100214, Uzbekistan
Mirzarayimov Zh.Z
Namangan Institute of Engineering and Technology, Namangan. 353-DIUM physics ўқituvchisi, Namangan city, Chartak
Mirzarayimova F.Z
Namangan Institute of Engineering and Technology, Namangan
Mamadalieva G.K

Abstract

The influence of defects induced by fast neutron irradiation on the carrier removal rate in reference p-Si and neutron transmutation doped silicon (p-Si < B, P >) was investigated by the Hall effect and specific resistance techniques at room temperature. It is shown that the carrier removal rate is larger in p-Si < B, P >, than that of p-Si . The barrier model was proposed for explanation of the observed effect..

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How to Cite
Makhmudov Sh.A, Mirzarayimov Zh.Z, Mirzarayimova F.Z, & Mamadalieva G.K. (2023). Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties. Eurasian Research Bulletin, 16, 156–160. Retrieved from https://geniusjournals.org/index.php/erb/article/view/3206
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Vol. 16 (2023): ERB
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Articles