Effect of erbium atom on photoluminescent properties of AlxGa1-xAs

Authors

  • A. Shamuratova Karakalpak state univessity named after Berdakh, Nukus, Uzbekistan.
  • M. Sharibaev Karakalpak state univessity named after Berdakh, Nukus, Uzbekistan.
  • Saparniyazova G. Karakalpak Institute of Agriculture and agricultural technologies, Nukus, Uzbekistan

Keywords:

photoluminescence, quantum well, temperature

Abstract

Radiation characteristics of GaAs and AlхGa1-хAs epitaxial layers with addition of rareearth element Yb are determined by photoluminescence method. In the exciton regions of epitaxial films, new lines of photoluminescent maxima AlхGa1-хAs determined for the intended ytterbium atoms. The effect of the concentration of the ytterbium atom on the change in the photoluminescence characteristics of the GaAs and AlхGa1-хAs epitaxial films was determined.

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Published

2025-04-05

Issue

Vol. 42 (2025): EJPCM

Section

Articles

License

Copyright (c) 2025 A. Shamuratova, M. Sharibaev, Saparniyazova G.

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

Effect of erbium atom on photoluminescent properties of AlxGa1-xAs. (2025). Eurasian Journal of Physics,Chemistry and Mathematics, 42, 5-8. https://geniusjournals.org/index.php/ejpcm/article/view/6830