The influence of ytterbium on the optical properties of epitaxial films of GaAs and AlXGa1-XAs

Authors

  • Sharibaev M Berdaq Karakalpak State University, Nukus
  • Sayitova S Berdaq Karakalpak State University, Nukus
  • Atakhanova L Berdaq Karakalpak State University, Nukus.

Keywords:

photoluminescence, quantum well, temperature

Abstract

The emission characteristics of epitaxial layers of GaAs and AlXGa1-XAs with the addition of the rare earth element Yb were determined using the photoluminescence method. In the exciton regions of AlXGa1-XAs epitaxial films, new photoluminescence maximum lines were determined for the doped ytterbium atoms. The influence of the ytterbium atom concentration on the change in the photoluminescence characteristics of GaAs and AlXGa1-XAs epitaxial films has been determined.

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Published

2026-01-10

Issue

Vol. 51 (2026): EJPCM

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

The influence of ytterbium on the optical properties of epitaxial films of GaAs and AlXGa1-XAs. (2026). Eurasian Journal of Physics,Chemistry and Mathematics, 51, 1-4. https://geniusjournals.org/index.php/ejpcm/article/view/7250