Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si

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Published: Jun 26, 2023
Keywords:
electrophysical parameters obtaining

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N.A.Turgunov
Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan.
E.Kh.Berkinov
Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
R.M.Turmanova
Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
N.B.Xaytimmetov
Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan.
L.E.Madaliyev
School No.44, Namangan city, Uzbekistan

Abstract

Currently, silicon single crystals doped with impurity atoms of 3d transition metals forming bulk impurity nozzles in silicon are considered widely studied materials in terms of obtaining semiconductor materials with predetermined parameters, as well as control of electrophysical parameters

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How to Cite
N.A.Turgunov, E.Kh.Berkinov, R.M.Turmanova, N.B.Xaytimmetov, & L.E.Madaliyev. (2023). Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si. Eurasian Journal of Physics,Chemistry and Mathematics, 19, 126–130. Retrieved from https://geniusjournals.org/index.php/ejpcm/article/view/4606
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Vol. 19 (2023): EJPCM
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Articles