M.K. HAQQULOV. Electrophysical properties of singlecrystal silicon sequentially doped with sulfur and zinc impurity atoms. Eurasian Journal of Physics,Chemistry and Mathematics, [S. l.], v. 24, p. 8–12, 2023. Disponível em: https://geniusjournals.org/index.php/ejpcm/article/view/5224. Acesso em: 10 jan. 2025.